technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com npn power silicon switching transistor qualified per mil-prf-19500/560 t4-lds-0011 rev. 3 (101764) page 1 of 4 devices levels 2n5339 2n5339u3 jan jantx jantxv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 100 vdc collector-base voltage v cbo 100 vdc emitter-base voltage v ebo 6.0 vdc base current i b 1.0 adc collector current i c 5.0 adc total power dissipation @ t a = +25c (1) @ t c = +25c (2) @ t c = +25c (3) ? u3 p t 1.0 17.5 75 w operating & storage junction temperature range t op , t stg -65 to +200 c thermal resistance, junction-to air r ja 175 c/w notes: 1) derate linearly 5.71mw/c for t a > 25c 2) derate linearly 100mw/c for t c > 25c 3) derate linearly 434mw/c for t c > 25c ? u3 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 50madc v (br)ceo 100 vdc collector-emitter cutoff current v ce = 100vdc i ceo 100 adc collector-emitter cutoff current v ce = 90vdc, v be = 1.5vdc i cex 1.0 adc collector-base cutoff current v cb = 100vdc i cbo 1.0 adc emitter-base cutoff current v eb = 6.0vdc i ebo 100 adc to-39 (to-205ad) u-3 (to-276aa)
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0011 rev. 3 (101764) page 2 of 4 electrical characteristics (t a = +25c, unless otherwise noted) (cont.) parameters / test conditions symbol min. max. unit on characteristics (3) forward-current transfer ratio i c = 0.5adc, v ce = 2.0vdc i c = 2.0adc, v ce = 2.0vdc i c = 5.0adc, v ce = 2.0vdc h fe 60 60 40 240 collector-emitter saturation voltage i c = 2.0adc, i b = 0.2adc i c = 5.0adc, i b = 0.5adc v ce(sat) 0.7 1.2 vdc base-emitter saturation voltage i c = 2.0adc, i b = 0.2adc i c = 5.0adc, i b = 0.5adc v be(sat) 1.2 1.8 vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small-signal short-circuit forward current transfer ratio |h fe | 3.0 15 i c = 0.5adc, v ce = 10vdc, f = 10mhz output capacitance c obo 250 pf v cb = 10vdc, i e = 0, 100khz f 1.0mhz input capacitance c ibo 1,000 pf v be = 2.0vdc, i c = 0, 100khz f 1.0mhz safe operating area dc tests t c = +25c, 1 cycle, t 0.5s test 1 v ce = 2.0vdc, i c = 5.0adc test 2 v ce = 5.0vdc, i c = 2.0adc test 3 v ce = 90vdc, i c = 55madc (3) pulse test: pulse width = 300s, duty cycle 2.0%
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0011 rev. 3 (101764) page 3 of 4 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. symbol cd shall not vary more than .010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) relative to tab. device may be measured by direct methods or by gauge. 7. symbol ld applies between l1 and l2. dimension ld applies between l2 and ll minimum. 8. lead designation, depending on device type, shall be as follows: 9. lead number three is electrically connected to case. 10. beyond r maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 11. symbol r applied to both inside corners of tab. 12. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 1. physical dimensions (to-39) package dimensions dimensions symbol inches millimeters note min max min max cd .305 .355 7.75 9.02 5 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 3 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7 ll .500 .750 12.70 19.05 7 lu .016 .019 0.41 0.48 7 l 1 .050 1.27 7 l 2 .250 6.35 7 tl .029 .045 0.74 1.14 3 tw .028 .034 0.71 0.86 10 p .100 2.54 5 q .050 1.27 4 r .010 0.25 10, 11 45 tp 45 tp 6 notes 1, 2, 8, 9 1, 2, 8, 9 lead number to-39 1 2 3 emitter base collector
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0011 rev. 3 (101764) page 4 of 4 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. in accordance with asme y14. 5m, diameters are equivalent to x symbology. 4. terminal 1 - collector, terminal 2 -base, terminal 3 - emitter. figure 2. physical dimensions and configuration (u3) (smd 5) (to-276aa) dimensions ltr inches millimeters min max min max bl .395 .405 10.03 10.29 bw .291 .301 7.40 7.65 ch .1085 .1205 2.76 3.06 lh .010 .020 0.25 0.51 lw 1 .281 .291 7.14 7.39 lw 2 .090 .100 2.29 2.54 ll 1 .220 .230 5.59 5.84 ll 2 .115 .125 2.92 3.18 ls 1 .150 bsc 3.81 bsc ls 2 .075 bsc 1.91 bsc q 1 .030 0.762 q 2 .030 0.762
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